An ab-initio study of P-type ZrCoY (Y––Sb and Bi) half – Heusler semiconductors

dc.contributor.authorAllana, L. ,
dc.contributor.authorMulwab, W.M.
dc.contributor.authorMwaboraa, J.M.
dc.contributor.authorMusembia, R.J.
dc.contributor.authorMapashac, R.E.
dc.date.accessioned2025-09-09T06:30:28Z
dc.date.available2025-09-09T06:30:28Z
dc.date.issued2023
dc.identifier.urihttps://www.cell.com/action/showPdf?pii=S2405-8440%2823%2905739-0
dc.identifier.urihttp://41.89.96.81:4000/handle/123456789/3262
dc.language.isoen
dc.publisherHeliyon
dc.subjectAb-initio study
dc.subjectP-type ZrCoY
dc.subjectY––Sb and Bi
dc.subjecthalf – Heusler semiconductors
dc.titleAn ab-initio study of P-type ZrCoY (Y––Sb and Bi) half – Heusler semiconductors
dc.typeArticle

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