An ab-initio study of P-type ZrCoY (Y––Sb and Bi) half – Heusler semiconductors
dc.contributor.author | Allana, L. , | |
dc.contributor.author | Mulwab, W.M. | |
dc.contributor.author | Mwaboraa, J.M. | |
dc.contributor.author | Musembia, R.J. | |
dc.contributor.author | Mapashac, R.E. | |
dc.date.accessioned | 2025-09-09T06:30:28Z | |
dc.date.available | 2025-09-09T06:30:28Z | |
dc.date.issued | 2023 | |
dc.identifier.uri | https://www.cell.com/action/showPdf?pii=S2405-8440%2823%2905739-0 | |
dc.identifier.uri | http://41.89.96.81:4000/handle/123456789/3262 | |
dc.language.iso | en | |
dc.publisher | Heliyon | |
dc.subject | Ab-initio study | |
dc.subject | P-type ZrCoY | |
dc.subject | Y––Sb and Bi | |
dc.subject | half – Heusler semiconductors | |
dc.title | An ab-initio study of P-type ZrCoY (Y––Sb and Bi) half – Heusler semiconductors | |
dc.type | Article |
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